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RJK0384DPA - Silicon N Channel Power MOS FET Power Switching

Features

  • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VD.

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Datasheet Details

Part number RJK0384DPA
Manufacturer Renesas Technology
File Size 145.71 KB
Description Silicon N Channel Power MOS FET Power Switching
Datasheet download datasheet RJK0384DPA Datasheet
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www.DataSheet4U.com RJK0384DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1724-0101 Preliminary Rev.1.01 Jul 10, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Pch Note3 Tch Tstg Note 2 MOS1 30 ±20 15 60 15 11 12.1 10 150 –55 to +150 MOS2 30 ±20 42 168 42 18 32.
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