RJK0389DPA - Silicon N Channel Power MOS FET Power Switching

Features

Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline.

Renesas Technology

Datasheet Details

Part number	RJK0389DPA
Manufacturer	Renesas Technology
File Size	119.72 KB
Description	Silicon N Channel Power MOS FET Power Switching
Datasheet	RJK0389DPA Datasheet
Additional preview pages of the RJK0389DPA datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.

Published: Feb 15, 2009 |