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RJK03E0DNS - Silicon N Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

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Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • REJ03G1902-0200 Rev.2.00 Apr 06, 2010 Outline.

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Preliminary www.DataSheet4U.com Datasheet RJK03E0DNS Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1902-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
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