RJK03E5DPA Overview
Preliminary .. Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
RJK03E5DPA Key Features
- Pb-free
- Halogen-free
- Outline