| Part number | RJK03E6DPA |
|---|---|
| Manufacturer | Renesas |
| File Size | 122.42 KB |
| Description | Silicon N Channel Power MOS FET |
| Datasheet | RJK03E6DPA_RenesasTechnology.pdf |
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Preliminary .. Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2))
| Part Number | Description |
|---|---|
| RJK03E0DNS | Silicon N Channel Power MOS FET |
| RJK03E1DNS | Silicon N Channel Power MOS FET |
| RJK03E2DNS | Silicon N Channel Power MOS FET |
| RJK03E3DNS | Silicon N Channel Power MOS FET |
| RJK03E4DPA | Silicon N Channel Power MOS FET |
| RJK03E5DPA | Silicon N Channel Power MOS FET |
| RJK03E7DPA | Silicon N Channel Power MOS FET |
| RJK03E8DPA | Silicon N Channel Power MOS FET |
| RJK03E9DPA | Silicon N Channel Power MOS FET |
| RJK0301DPB | Silicon N Channel Power MOS FET Power Switching |
