RJK03N8DNS Description
Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 2012.
RJK03N8DNS Key Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
- Pb-free
- Halogen-free