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RJK03N8DNS - Silicon N Channel Power MOS FET

Description

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Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V).
  • Pb-free.
  • Halogen-free Outline.

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Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0789EJ0100 Rev.1.00 Feb 29, 2012 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 4.6 m typ. (at VGS = 8.0 V)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
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