Datasheet4U Logo Datasheet4U.com

RJK0454DPB - Silicon N Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching Low drive current Low on-resistance RDS(on) = 3.9 mī— typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting REJ03G1877-0200 Rev.2.00 Mar 04, 2010 Outline.

📥 Download Datasheet

Datasheet preview – RJK0454DPB

Datasheet Details

Part number RJK0454DPB
Manufacturer Renesas Technology
File Size 168.20 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0454DPB Datasheet
Additional preview pages of the RJK0454DPB datasheet.

📁 Similar Datasheet

Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. www.DataSheet4U.com Notice 1. All information included in this document is current as of the date this document is issued.
Published: |