RJK0452DPB
RJK0452DPB is Silicon N Channel Power MOS FET manufactured by Renesas.
Features
- High speed switching
- Capable of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance
RDS(on) = 2.8 m typ. (at VGS = 10 V)
- Pb-free
- Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
5 D
1, 2, 3 Source
Gate
Drain
SSS 123
Application
- Switching Mode Power Supply
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 3. Tc = 25C
Symbol
VDSS VGSS
ID ID(pulse)Note1
IDR IAP Note 2 EAS Note 2 Pch Note3 ch-C
Tch
Tstg
Ratings 40 20 45 180 45 22.5 40.5 55 2.27 150
- 55 to +150
(Ta = 25°C)
Unit V V A A A A m J W
C/W C C
This product is for the low voltage drive ( 10V). If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage (VGS(off)) which characteristics has been improved.
R07DS0074EJ0200 Rev.2.00 Apr 09, 2013
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