RJK0230DPA
RJK0230DPA is Silicon N Channel Power MOS FET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10
Sep 12, 2011
Features
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- Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free
Outline
RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3))
2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8
5 6 7 8
1 G1 8 G2 9
4 3 2 1
4 S2 S2 S2 5 6 7 3 2 1 (Bottom View)
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source
MOS1
MOS2 and Schottky Barrier...
