RJK0230DPA Description
Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep 12, 2011.
RJK0230DPA Key Features
- Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free