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RJK0236DPA - Built in SBD N Channel Power MOS FET

General Description

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Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0792EJ0200 Rev.2.00 Mar 22, 2013 Outline.

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Datasheet Details

Part number RJK0236DPA
Manufacturer Renesas
File Size 187.12 KB
Description Built in SBD N Channel Power MOS FET
Datasheet download datasheet RJK0236DPA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK0236DPA 25V, 50A, 1.8mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching Features        High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0792EJ0200 Rev.2.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.