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RJK0323JPD - Silicon N-Channel MOS FET

General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Key Features

  • For Automotive.

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Datasheet Details

Part number RJK0323JPD
Manufacturer Renesas
File Size 109.31 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet RJK0323JPD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK0323JPD Silicon N Channel MOS FET High Speed Power Switching Features • For Automotive application • AEC-Q101 compliant • Low on-resistance : RDS(on) = 7.0 mΩ typ. • Low drive current • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics • Channel to case thermal impedance θch-c: 3.