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RJK0234DNS - N Channel Power MOS FET

General Description

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Key Features

  • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS1073EJ0130 Rev.1.30 May 23, 2013 Outline.

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Datasheet Details

Part number RJK0234DNS
Manufacturer Renesas
File Size 312.84 KB
Description N Channel Power MOS FET
Datasheet download datasheet RJK0234DNS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK0234DNS 25V, 35A, 5.8mΩmax. N Channel Power MOS FET High Speed Power Switching Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS1073EJ0130 Rev.1.30 May 23, 2013 Outline RENESAS Package code: PVSN0008JD-A (Package name: 8pin HVSON(3333)) 5 6 7 8 4 G 5 6 7 8 D D D D 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.