RJK0406JPE
RJK0406JPE is Silicon N-Channel MOS FET manufactured by Renesas.
Features
- For Automotive application
- AEC-Q101 pliant
- Low on-resistance : RDS(on) = 1.65 m typ.
- High current devices : ID = 160 A
- Low input capacitance : Ciss = 6300 p F typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50 3. Tc = 25C 4. AEC-Q101 pliant
Symbol
VDSS
VGSS I Note3
ID (pulse) Note1 I Note3
IDR (pulse) Note1 I Note2
E Note2
Pch Note3 Tch Note4
Tstg
Thermal Impedance Characteristics
- Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
1. Gate 2. Drain 3. Source 4. Drain
Value 40
+20 /
- 5 160 640 160 640 70 653 192 175
- 55 to +150
(Ta = 25C)
Unit V V A A A A A m J W C C
R07DS0335EJ0200 Rev.2.00 Dec 19, 2011
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