• Part: RJK0406JPE
  • Description: Silicon N-Channel MOS FET
  • Manufacturer: Renesas
  • Size: 80.85 KB
Download RJK0406JPE Datasheet PDF
Renesas
RJK0406JPE
RJK0406JPE is Silicon N-Channel MOS FET manufactured by Renesas.
Features - For Automotive application - AEC-Q101 pliant - Low on-resistance : RDS(on) = 1.65 m typ. - High current devices : ID = 160 A - Low input capacitance : Ciss = 6300 p F typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4. AEC-Q101 pliant Symbol VDSS VGSS I Note3 ID (pulse) Note1 I Note3 IDR (pulse) Note1 I Note2 E Note2 Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics - Channel to case thermal impedance ch-c: 0.781C/W Preliminary Datasheet R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 1. Gate 2. Drain 3. Source 4. Drain Value 40 +20 / - 5 160 640 160 640 70 653 192 175 - 55 to +150 (Ta = 25C) Unit V V A A A A A m J W C C R07DS0335EJ0200 Rev.2.00 Dec 19, 2011 Page 1 of...