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RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 1.65 m typ. ...
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n AEC-Q101 compliant Low on-resistance : RDS(on) = 1.65 m typ. High current devices : ID = 160 A Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Tch = 25C, Rg 50 3. Tc = 25C 4.
RJK0406JPE Datasheet
