RJK0406JPE Datasheet PDF (Silicon N-Channel MOS FET)

RJK0406JPE - Silicon N-Channel MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

the incorporation of these circuits, software, and information in the design of your equipment.

Features

For Automotive.

Datasheet Details

Part number	RJK0406JPE
Manufacturer	Renesas
File Size	80.85 KB
Description	Silicon N-Channel MOS FET
Datasheet	RJK0406JPE Datasheet
Additional preview pages of the RJK0406JPE datasheet.

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Full PDF Text Transcription

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RJK0406JPE Silicon N Channel MOS FET High Speed Power Switching Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 1.65 m typ.  High current devices : ID = 160 A  Low input capacitance : Ciss = 6300 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4.

Published: May 15, 2016 |