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RJK0703DPP-E0 - N-Channel MOS FET

Description

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Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V).
  • Package TO-220FP Outline.

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Full PDF Text Transcription

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RJK0703DPP-E0 N-Channel MOS FET 75 V, 70 A, 6.7 m Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)  Package TO-220FP Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) G 1 23 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse) Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note2 EAS Note2 Pch Note3 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at L = 100 H, Tch = 25C, Rg  50, 3. Tc = 25C Preliminary Datasheet R07DS0630EJ0200 Rev.2.
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