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RJK0851DPB - Silicon N Channel Power MOS FET

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of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

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  • characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of.

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Part number RJK0851DPB
Manufacturer Renesas Technology
File Size 100.21 KB
Description Silicon N Channel Power MOS FET
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RJK0851DPB 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0079EJ0200 Rev.2.00 Apr 09, 2013 Functions  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
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