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RJK0854DPB - Silicon N Channel Power MOS FET

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Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • High speed switching.
  • Low drive current.
  • Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • High density mounting Outline.

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Datasheet Details

Part number RJK0854DPB
Manufacturer Renesas Technology
File Size 129.66 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0854DPB Datasheet
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RJK0854DPB 80V, 25A, 13 m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1055EJ0200 (Previous: REJ03G1883-0100) Rev.2.
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