RJK1001DPN-E0 Description
RJK1001DPN-E0 N-Channel MOS FET 100 V, 80 A, 5.5.
RJK1001DPN-E0 Key Features
- High speed switching
- Low drive current
- Low on-resistance RDS(on) = 4.4 m typ. (at VGS = 10 V)
- Package TO-220AB
- Part: RJK1001DPN-E0
- Manufacturer: Renesas
- Size: 77.77 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
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