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RJK2009DPM - Silicon N Channel MOS FET High Speed Power Switching

Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK2009DPM
Manufacturer Renesas Technology
File Size 122.95 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet RJK2009DPM Datasheet
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Full PDF Text Transcription

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RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0200 Rev.2.00 Aug.09.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 40 160 40 160 40 106 60 2.
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