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RJK2511DPK
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
www.DataSheet4U.com Drain to source voltage
Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJK2511DPK Datasheet
