RJK5012DPE
RJK5012DPE is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Preliminary .. Datasheet
Silicon N Channel MOS FET High Speed Power Switching
Features
- Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
G 2...
