RJK5012DPE Overview
Preliminary .. Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S
RJK5012DPE Key Features
- Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
