RJK5012DPE Description
Datasheet RJK5012DPE Silicon N Channel MOS FET High Speed Power Switching.
RJK5012DPE Key Features
- Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)
- Low leakage current
- High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010