RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching

Product Overview

Renesas Technology

Datasheet Details

Part number	RJK5012DPE
Manufacturer	Renesas Technology
File Size	109.94 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK5012DPE Datasheet
Additional preview pages of the RJK5012DPE datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 0.515  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C).
Low leakage current.
High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010 Outline.

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Published: Jul 23, 2010 |