RJK5030DPD Overview
Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching.
RJK5030DPD Key Features
- Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
- High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010
