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RJK5030DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. Value at Tc = 25C 3.