RJK5030DPD Key Features
- Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
- High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010
- Part: RJK5030DPD
- Description: Silicon N Channel MOS FET High Speed Power Switching
- Manufacturer: Renesas
- Size: 94.44 KB
Other RJK5030DPD Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK5030DPP-M0 | High Speed Power Switching |