RJK5030DPD - Silicon N Channel MOS FET High Speed Power Switching

Product Overview

Renesas Technology

Datasheet Details

Part number	RJK5030DPD
Manufacturer	Renesas Technology
File Size	94.44 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK5030DPD Datasheet
Additional preview pages of the RJK5030DPD datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C).
High speed switching REJ03G1913-0100 Rev.1.00 Apr 12, 2010 Outline.

📁 Similar Datasheet

RJK5030DPP-M0 - High Speed Power Switching (Renesas)
RJK5031DPD - N-Channel Power MOSFET (Renesas)
RJK5032DPD - MOS FET (Renesas)
RJK5032DPH-E0 - High Speed Power Switching (Renesas)
RJK5033DPD - N-Channel Power MOSFET (Renesas)
RJK5033DPP-M0 - High Speed Power Switching (Renesas)
RJK5035DPP-E0 - N-Channel Power MOSFET (Renesas)
RJK5036DP3-A0 - MOS FET (Renesas)

Other Datasheets by Renesas Technology

RJK5002DJE - High Speed Power Switching MOS FET
RJK5003DPD - Silicon N Channel Power MOS FET
RJK5009DPP - Silicon N Channel Power MOS FET
RJK5012DPE - Silicon N Channel MOS FET High Speed Power Switching
RJK5012DPP - Silicon N-Channel MOSFET
RJK5013DPE - Silicon N Channel Power MOS FET

Published: Jul 23, 2010 |