• Part: RJK6006DPD
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 101.13 KB
Download RJK6006DPD Datasheet PDF
Renesas
RJK6006DPD
Features - Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) - High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW 10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area Symbol VDSS VGSS ID Note4 ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note 2 ch-c Tch Tstg Note1 Value 600 30 5 15 5 15 5 2 77.6 1.61 150 - 55 to +150 Unit V V A A A A A m J W C/W C C REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Page 1 of...