RJK6006DPD Description
Datasheet RJK6006DPD Silicon N Channel MOS FET High Speed Power Switching.
RJK6006DPD Key Features
- Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
- High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010