Datasheet Details
| Part number | RJK6006DPD |
|---|---|
| Manufacturer | Renesas |
| File Size | 101.13 KB |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
| Datasheet |
 RJK6006DPD Datasheet
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General Description
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Key Features
- Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C).
- High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline.