• Part: RJK6009DPP
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 98.21 KB
Download RJK6009DPP Datasheet PDF
Renesas
RJK6009DPP
Features - Low on-resistance - Low leakage current - High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1. Gate 2. Drain 3. Source 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW ≤ 10 µs, duty cycle ≤ 1% Value at Tc = 25°C STch = 25°C, Tch ≤ 150°C Limited by maximum safe operation area Symbol VDSS VGSS ID Note4 ID (pulse) Note1 IDR IDR (pulse) Note1 IAPNote3 EAR Note3 Pch Note2 θch-c Tch Tstg Ratings 600 ±30 18 54 18 54 4 0.87 40 3.125 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C REJ03G1607-0100 Rev.1.00 Dec 04, 2007 Page 1 of 3 .. Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown...