RJK6006DPP-A0 Overview
Key Features
- Low on-resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 °C)
- Low leakage current
- High speed switching
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| RJK6006DPD | Renesas | Silicon N Channel MOS FET High Speed Power Switching |