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RJK6006DPP-E0 - N-Channel Power MOSFET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C).
  • High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)  High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings www.DataSheet.co.kr (Ta = 25C) Value 600 30 5 15 5 15 5 1.36 29 4.