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RJK6002DPE - MOS FET

General Description

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Key Features

  • Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C).
  • Low drive current.
  • High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK6002DPE 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0214EJ0100 Rev.1.00 Jun 21, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3.