RJK6002DJE Key Features
- Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011
- Part: RJK6002DJE
- Description: MOS FET
- Manufacturer: Renesas
- Size: 87.89 KB
Other RJK6002DJE Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
RJK6002DPD | Silicon N Channel MOS FET High Speed Power Switching |