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RJL6018DPK
Silicon N Channel MOS FET High Speed Power Switching
Features
• • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1819-0100 Rev.1.00 Sep 11, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJL6018DPK Datasheet
