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RJL6012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
• • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
D 4 1. Gate 2. Drain 3. Source 4. Drain
1
G 2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
RJL6012DPE Datasheet
