RQA0005QXDQS Description
RQA0005QXDQS Silicon N-Channel MOS FET REJ03G1325-0100 Rev.1.00 Oct 16, 2006.
RQA0005QXDQS Key Features
- High Output Power, High Gain, High Efficiency Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
- pact package capable of surface mounting