Renesas Electronics 1SS305
SILICON SWITCHING DIODE
| Part No. | 1SS305 |
|---|---|
| Datasheet | 1SS305 Download |
| Manufacturer |  Renesas Electronics |
| Description | SILICON SWITCHING DIODE |
| Buy | Stock & Price |
FEATURES
● Low capacitance: Ct = 4.0 pF MAX.● High speed switching: trr = 3.0 ns MAX.
● Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C) Peak Reverse Voltage VRM DC Reverse Voltage VR Peak Forward Current IFM Average Rectified Current IO DC Forward Current IF Maximum Temperatures Junction Temperature Tj Storage Temperature Range Tstg Thermal Resistance Junction to Ambient Rth(j-a) 100 V 100 V 300 mA 100 mA 100 mA 150 °C –55 to + 150 °C 0.85 °C/mW PACKAGE DIMENSIONS (Unit: mm) 2.1±0.1 1.25±0.1 2.0±0.2 0.3−+00.1 0.65 0.65 2 1 3 0.3−+00.1 Marking 0 to 0.1 0.15−+00..015 0.9±0.1 0.3 CONNECTION DIAGRAM (Top View)ELECTRICAL CHARACTERISTICS
(TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Forward Voltage VF1 IF = 10 mA VF2 IF = 50 mA VF3 IF = 100 mA Reverse Current IR VR = 100 V Capacitance Ct VR = 0 V, f = 1.0 MHz Reverse Recovery Time trr IF = 10 mA, VR = 6 V, RL = 100 Ω, See Test Circuit. 2 3 1. N.C. 1 2. Anode 3.
