Renesas Electronics 2SC2654
NPN Transistor
FEATURES
● Large current capacitance in small dimension: IC(DC) = 7 A● Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A)
● Ideal for use in a lamp driver
● Complementary transistor: 2SA1129 PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current (DC) IC(DC) Collector current (pulse) IC(pulse)* Base current (DC) Total power dissipation Total power dissipation IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Junction temperature Tj Storage temperature Tstg * PW ≤ 300 µs, duty cycle ≤ 10% Ratings 100 40 7.0 7.0 15 3.5 40 1.5 150 −55 to +150 Unit V V V A A A W W °C °C Electrode ConnectionELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Symbol Conditions Collector