High Collector Current:: IC= 7A
Low Collector Saturation Voltage
:VCE(sat)= 0.3(V)(Max)@IC= 3A
Complement to Type 2SA1129
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low-frequency power amplifiers and mid-speed
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
:VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed
switching applications. ·Ideal for use in a lamp driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
Total Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.5
A
1.
2SC2654 Datasheet
