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2SC2655 - NPN Transistor

General Description

Silicon NPN epitaxial type Low saturation voltage Complementary to 2SA1020 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Power switching applications ABSOLUTE MAXI

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isc Silicon NPN Pow Transistor DESCRIPTION ·Silicon NPN epitaxial type ·Low saturation voltage ·Complementary to 2SA1020 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 0.9 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2655 isc website：www.iscsemi.