Inchange Semiconductor 2SC2655
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2655 |
|---|---|
| Datasheet | 2SC2655 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN epitaxial type●Low saturation voltage
●Complementary to 2SA1020
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power amplifier applications●Power switching applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 0.9 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2655 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Pow TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A ; IB= 50mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V hFE-2 DC Current Gain IC= 1.5A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 500mA ; VCE= 2V● hFE-1 Classifications O 70-120 Y 120-140 2SC2655 MIN TYP.
