2SC2650 - Silicon NPN Transistor

Toshiba

Key Features

Excellent Switching Tims t r =1.0ys Max. , t f =1.0ys Max. (IC=5A).
High Collector Breakdown Voltage VCEO=400V.

2SC2650 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2650
Manufacturer	Toshiba
File Size	142.92 KB
Description	Silicon NPN Transistor
Datasheet	2SC2650 Datasheet

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Full PDF Text Transcription (Reference)

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2SC2650 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES • Excellent Switching Tims t r =1.0ys Max. , t f =1.0ys Max. (IC=5A) • High Collector Breakdown Voltage VCEO=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (To=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO 'CEO v EBO PC r stg RATING 500 400 10 100 150 -55^150 UNIT V 1. BASE Z COLLECTOR (HEAT SINK) 3.