Datasheet Details
| Part number | 2SC2658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2658-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SC2658 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.54 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC2658-INCHANGE.pdf |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2658 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| 2SC2650 | Silicon NPN Power Transistor |
| 2SC2654 | NPN Transistor |
| 2SC2655 | NPN Transistor |
| 2SC2656 | NPN Transistor |
| 2SC2657 | NPN Transistor |
| 2SC2659 | NPN Transistor |
| 2SC2608 | NPN Transistor |
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |