2SC2656 Overview
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - High Switching Speed - High Reliability - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SC2656 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 194.51 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC2655 | Toshiba | Silicon NPN TRANSISTOR |
| 2SC2652 | Toshiba | Silicon NPN Transistor |
| 2SC2655L | SeCoS Halbleitertechnologie GmbH | NPN Transistor |
| 2SC2650 | Toshiba | Silicon NPN Transistor |
| 2SC2655 | Unisonic Technologies | NPN SILICON TRANSISTOR |