Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
High Switching Speed
Wide Area of Safe Operation
Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
100
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC2650
isc website：www.iscsemi.
2SC2650 Datasheet
