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2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SA1020.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
0.5
A
JEDEC
TO-92MOD
Collector power dissipation Junction temperature Storage temperature range
PC
900
mW
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.
2SC2655 Datasheet
