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SILICON NPN EPITAXIAL PLANAR TYPE
2 - 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(50V SUPPLY VOLTAGE USE)
FEATURE S_ . Specified 50V, 28MHz Characteristics
: Output Power : P o=200WpEP : Minimum Gain : Gpe=13dB : Efficiency : 7 C =35% (Min.) : Intermodulation Distortion : IMD=-30dB(Max.
. 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V CC=50V, Po=150WPEp, f=28MHz
Unit in mm
MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL 'CBO VCES VCEO VEBO ic
RATING 85 85 55
20
PC r s tg
300 175
-65-175
UNIT V
JEDEC
1. EMITTER 2. BASE 3. EMITTER 4.
2SC2652 Datasheet
