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2SC5337 - NPN SILICON RF TRANSISTOR

General Description

Rev.

First edition issued Second edition issued Second V1 edition issued The company name is changed to Renesas Electronics Corporation.

Key Features

  • Low distortion: IM2 = 59.0 dB TYP. , IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA.
  • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz.
  • 4-pin power minimold package with improved gain from the 2SC4536 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012.

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Datasheet Details

Part number 2SC5337
Manufacturer Renesas
File Size 113.90 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC5337 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet 2SC5337 NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 R09DS0047EJ0300 Rev.3.00 Sep 14, 2012 ORDERING INFORMATION Part Number 2SC5337 2SC5337-T1 Order Number 2SC5337-AZ 2SC5337-T1-AZ Package 4-pin power minimold (Pb-Free) Note Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form • Magazine case • 12 mm wide embossed taping • Collector face the perforation side of the tape Note Contains Lead in the part except the electrode terminals.