q q
0.65 max. 1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat).
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*1
(Ta=25˚C)
Ratings 60 50 15 1.5 0.7 1.0 150 –55 ~ +150 1cm2 Unit
0.45–0.05
0.45–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg
2.5±0.5 1 2
2.5±0.5 3
V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.
2SC5335 Datasheet
