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PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
•
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1 1.6±0.2 1.5±0.1
•
High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
2
Symbol VCBO VCEO VEBO IC
Note1 PT
Rating 20 12 3.0 100 1.2 150 –65 to +150
Unit
0.8MIN.
C E B E
V V V mA W °C °C
0.42 ±0.06 1.5 3.0 0.46 ±0.06
0.42 ±0.06
3.95±0.25
2.45±0.1
0.25±0.02
Tj Tstg
Note 1. 0.
2SC5336 Datasheet
