| Part Number | 2SC5336 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
•
PACKAGE DIMENSIONS
(in millimeters)
4.5±0.1 1.6±0.2 1.5±0.1
•
.
* PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 * High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Collector to Base Voltage Collector. |
2SC5336 Datasheet and Specifications PDF
The 2SC5336 is a NPN TRANSISTOR.
| Part Number | 2SC5336 Datasheet |
|---|---|
| Description | NPN SILICON RF TRANSISTOR |
| Manufacturer | Renesas |
| Overview |
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th.
* High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 * 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel * Magazine case * 12 mm wide embossed taping * Collector face the per. |