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2SC5338 - NPN TRANSISTOR

General Description

The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V).

This low distortion characteristics is suitable for the CATV, tele-communication, and such.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE = 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES • PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 High gain |S21 | = 10 dB TYP., @VCE = 5 V, Ic = 50 mA, f = 1 GHz 2 • Low distortion and low voltage IM2 = −55 dB TYP., IM3 = −76 dB TYP. @VCE = 5 V, Ic = 50 mA, Vin = 105 dB µ V/75 Ω • gain-improved on the 2SC4703 E 0.8 MIN.