The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC5333
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5333 300 300 6 2 0.2 35(Tc=25°C) 150 –55to+150 Unit V V V A A W °C °C
2.54 2.2±0.2
Application : Series Regulator, Switch, and General Purpose
(Ta=25°C) 2SC5333 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V MHz pF
13.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
Unit mA V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 100 RL (Ω) 100 IC (A) 1.