2SD1366A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
ADE-208-1146 (Z) 1st. Edition Mar. 2001
1 2 3
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature
VCBO VCEO VEBO IC i
- 1
C(peak)
- 2 Tj
30 25 5 1 1.5 1 150
Storage temperature
Tstg
- 55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO 30
- voltage
Collector to emitter breakdown V(BR)CEO 25
- voltage
Emitter to base breakdown
V(BR)EBO
- voltage
Collector cutoff...
