Datasheet4U.com

2SD1421 Datasheet PDF

Renesas Electronics 2SD1421

The 2SD1421 is grouped by hFE1 as follows.
Part No. 2SD1421
Datasheet 2SD1421 Download
Manufacturer
Renesas Electronics
Description Silicon NPN Epitaxial Transistor
Buy Stock & Price
2SD1421 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current Collector peak current Collector power dissipation IC iC(peak)*1 PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 180 160 5 1.5 3 1 150 –55 to +150 (Ta = 25°C) Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1421

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — V IC = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 160 — — V IC = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 1 mA, IC = 0 Collector cutoff current DC current transfer ratio ICBO — — 10 µA VCB = 160 V, IE = 0 hFE1*1 60 — 200 VCE = 5 V, IC = 0.15 A hFE2 30 — — VCE = 5 V, IC = 0.5 A Collector to emitter saturation voltage VCE(sat) — — 1.0 V IC = 0.5 A, IB = 50 mA, Pulse Base to emitter voltage VBE — — 0.9 V VCE = 5 V, IC = 0.15 A, Pulse Note: 1.
2SD1421 page 2 preview 2SD1421 page 3 preview