• Part: 2SD1583-Z
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: Renesas
  • Size: 1.68 MB
Download 2SD1583-Z Datasheet PDF
Renesas
2SD1583-Z
DESCRIPTION <R> The 2SD1583-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES - High h FE: h FE = 800 to 3200 - Low VCE(sat): VCE(sat) = 0.18 V TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Base to Emitter Voltage VEBO Collector Current (DC) IC(DC) Collector Current (pulse) Note 1 IC(pulse) Total Power Dissipation (TA = 25°C) Note 2 Junction Temperature Tj °C Storage Temperature Tstg - 55 to +150 °C PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 Note +0.2 -...