Renesas Electronics 2SD1691
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SD1691 |
|---|---|
| Datasheet | 2SD1691 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)● Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C)
● Complementary transistor: 2SB1151
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7.0 V Collector current (DC) IC(DC) 5.0 A Collector current (pulse) IC(pulse)* 8.0 A Base current (DC) IB(DC) 1.0 A Total power dissipation PT (Ta = 25°C) 1.3 W Total power dissipation PT (Tc = 25°C) 20 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50%ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Base saturation voltage Turn-on time Storage time Fall time IC...
